On November 27, 2024, Dr. Hussain A. Alsalman delivered an enlightening seminar titled Towards High-Performance 2D Nanoelectronics. The presentation showcased groundbreaking advancements in the field of two-dimensional materials, shedding light on their potential to revolutionize next-generation electronics.

Key highlights included discussions on large-area AB-stacked bilayer graphene, MoS₂/graphene heterostructures, epitaxial graphene, and the CVD growth of boron nitride. Dr. Alsalman also explored innovations in doped CVD WSe₂, 2D GaN, heterostructure band alignment, and bandgap engineering. These advancements mark significant strides in leveraging 2D materials for high-performance applications, paving the way for transformative developments in nanoelectronics.

 The following are the highlights of the event: